[755-1] Design Rules and Tutorial 3

[Konstantinos Dovrolis <dovrolis@cs.wisc.edu>]

755 folks,

I suggest that you spend some time at the MOSIS web page:
		www.mosis.org

Of special interest is the file with the design-rules
for the technology that we will be designing for (SCMOS):

http://www.mosis.org/New/Technical/Designrules/scmos/

Although this is a lambda-based technology, keep in mind 
that the actual lambda that we will be using is 0.4 microns, 
and since the minimum transistor length is 2 lambda, the 
technology is characterized as 0.8 micron.

The Technology-Code for this technology is SCN. The layers 
that we will be using are:

1. N-well (note that it is a P-substrate technology)
2. Active
3. N-select
4. P-select
5. Poly
6. Contact (between poly and Metal 1, and between active and Metal 1)
7. Metal 1
8. Metal 2 
9. Via (contact between Metal 1 and Metal 2)

Some familiarity with these rules will be needed in the 3rd tutorial
(which is now posted at the course's web page), in which you will draw the
layout of an inverter using IC station.

Please let me know if you have any problems with any of the above.


Constantinos